PSMN3R5-30YL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia's PSMN3R5-30YL-115 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current of 100A at 25°C, with a maximum power dissipation of 74W. The low on-resistance is specified as 3.5mOhm at 15A and 10V gate-source voltage. Key parameters include a gate charge of 41nC at 10V and input capacitance (Ciss) of 2458pF at 12V. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is 2.15V at 1mA. The PSMN3R5-30YL-115 is housed in a surface-mount LFPAK56 (Power-SO8) package, supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2458 pF @ 12 V |
Request a Quote
Clients Also Buy
PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236AB
NX7002AKAR
MOSFET N-CH 60V TO-236AB
BUK9222-55A,118
MOSFET N-CH 55V 48A DPAK
