PSMN3R3-60PLQ
MOSFET N-CH 60V 130A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN3R3-60PLQ is a 60V N-channel Power MOSFET housed in a TO-220AB package. This device offers a continuous drain current of 130A (Tc) with a maximum power dissipation of 293W (Tc). Key parameters include a low on-resistance (Rds(on)) of 3.4mOhm at 25A and 10V, and a gate charge (Qg) of 95nC at 5V. The input capacitance (Ciss) is rated at 10115pF at 25V. Operating over a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10115 pF @ 25 V |
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