PSMN3R2-30YLC,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PSMN3R2-30YLC-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 100A (Tc) at 25°C, with a maximum power dissipation of 92W (Tc). The device offers a low on-resistance (Rds On) of 3.5mOhm at 25A and 10V, facilitated by a gate drive voltage range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 29.5 nC at 10 V and an input capacitance (Ciss) of 2081 pF at 15 V. It is housed in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2081 pF @ 15 V |