PSMN3R0-60ES,127
MOSFET N-CH 60V 100A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. presents the PSMN3R0-60ES-127, an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 100 A at 25°C, with a maximum power dissipation of 306 W. The low on-resistance of 3mOhm at 25 A and 10 V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 130 nC at 10 V and input capacitance (Ciss) of 8079 pF at 30 V. The device is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) suitable for through-hole mounting. With an operating temperature range of -55°C to 175°C, this MOSFET is well-suited for demanding applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8079 pF @ 30 V |