PSMN3R0-60BS,118
MOSFET N-CH 60V 100A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN3R0-60BS-118 is a N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 100A at 25°C. With a low on-resistance (Rds On) of 3.2mOhm at 25A and 10V, it offers efficient power handling. The device is packaged in a surface-mount D2PAK (TO-263-3) for robust thermal management, supporting a maximum power dissipation of 306W (Tc). Key electrical characteristics include a Gate Charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 8079 pF at 30V. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for demanding sectors such as automotive, industrial power, and high-power switching designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8079 pF @ 30 V |
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