PSMN3R0-30YLD/1X
MOSFETManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN3R0-30YLD-1X is a high-performance N-channel MOSFET designed for demanding power applications. This device features a low on-state resistance (Rds(on)) of 3 mO typical at a Vgs of 10V, enabling efficient power delivery and minimizing conduction losses. With a continuous drain current (Id) rating of 220A and a pulsed drain current (Idm) of 1000A, it is well-suited for high-current switching and motor control. The MOSFET operates with a drain-source voltage (Vds) of 30V and a gate-source voltage (Vgs) range of ±20V. Its robust construction and thermal performance make it ideal for use in automotive, industrial power supplies, and electric vehicle applications. Packaged in bulk, the PSMN3R0-30YLD-1X offers a reliable solution for power management challenges.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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