PSMN2R5-30YL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN2R5-30YL-115 is a 30 V N-Channel Power MOSFET designed for high-density power applications. This component features a low on-resistance of 2.4 mOhm at 15 A and 10 V, facilitating efficient power transfer. With a continuous drain current capability of 100 A at 25°C and a maximum power dissipation of 88 W, it is suitable for demanding thermal environments. The device is housed in an LFPAK56 (Power-SO8) package, enabling excellent thermal performance and compact board layouts. Typical applications include industrial power supplies, automotive electronics, and power management systems. The MOSFET supports a gate drive voltage range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is rated at 3468 pF at 12 V, and gate charge (Qg) is a maximum of 57 nC at 10 V. This component operates across a temperature range of -55°C to 175°C. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3468 pF @ 12 V |
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