PSMN2R4-30MLD/1X
MOSFETManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia PSMN2R4-30MLD-1X is a high-performance N-channel MOSFET designed for demanding applications. This device offers a low on-state resistance (RDS(on)) of 2.4 mOhm at a VGS of 10V, ensuring efficient power transfer and minimal power loss. With a continuous drain current (ID) rating of 100A and a pulsed drain current of 750A, it is well-suited for high-current switching applications. The MOSFET operates with a drain-source voltage (VDS) of 30V and features a gate-source threshold voltage (VGS(th)) typically ranging from 2V to 2.5V. Its robust construction and low thermal resistance contribute to reliable operation in power management systems. This component is commonly utilized in automotive applications, industrial power supplies, and electric vehicle charging systems. The PSMN2R4-30MLD-1X is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
Request a Quote
Clients Also Buy
BUK764R4-60E,118
MOSFET N-CH 60V 100A D2PAK
PHB47NQ10T,118
MOSFET N-CH 100V 47A D2PAK
PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236AB
