PSMN2R1-40PLQ
MOSFET N-CH 40V 150A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN2R1-40PLQ is an N-Channel MOSFET with a drain-source voltage (Vdss) of 40V. This through-hole component, housed in a TO-220AB package, offers a continuous drain current (Id) of 150A at 25°C and a maximum power dissipation of 293W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 2.2mOhm at 25A and 10V, input capacitance (Ciss) of 9584pF at 25V, and gate charge (Qg) of 87.8nC at 5V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V, with a threshold voltage (Vgs(th)) of 2.1V at 1mA. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9584 pF @ 25 V |
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