PSMN2R0-60PSRQ
MOSFET N-CH 60V 120A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN2R0-60PSRQ is a 60V N-Channel MOSFET designed for high-power switching applications. This component features a low on-resistance of 2.2 mOhm at 25A and 10V, enabling efficient power transfer with minimal dissipation. With a continuous drain current capability of 120A (Tc) and a maximum power dissipation of 338W (Tc), it is suitable for demanding power management tasks. The device is housed in a standard TO-220AB through-hole package, offering robust thermal performance and ease of integration into existing designs. Key electrical parameters include a gate charge of 192 nC at 10V and an input capacitance of 13500 pF at 30V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 338W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 192 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 30 V |
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