PSMN2R0-30YL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia TrenchMOS™ PSMN2R0-30YL-115 is a 30V N-Channel Power MOSFET in a LFPAK56 (Power-SO8) package. This device offers a continuous drain current of 100A (Tc) with a low on-resistance of 2mOhm at 15A and 10V. Featuring a maximum power dissipation of 97W (Tc), it is designed for efficient power handling. The gate voltage range for optimal performance is between 4.5V and 10V, with a maximum gate-source voltage of ±20V. Key electrical characteristics include a gate charge (Qg) of 64 nC (max) at 10V and an input capacitance (Ciss) of 3980 pF (max) at 12V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive, industrial, and consumer electronics. This component is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 97W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 12 V |
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