PSMN2R0-30BL,118
MOSFET N-CH 30V 100A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN2R0-30BL-118 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C. With a low on-resistance (Rds On) of 2.1mOhm at 25A and 10V, and a maximum power dissipation of 211W (Tc), it is well-suited for high-current switching. The MOSFET utilizes advanced silicon technology for optimal performance. Key parameters include a gate charge (Qg) of 117 nC at 10V and input capacitance (Ciss) of 6810 pF at 15V. It operates over a wide temperature range of -55°C to 175°C (TJ). The PSMN2R0-30BL-118 is housed in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied in cut tape. This component is commonly found in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 211W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6810 pF @ 15 V |
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