PSMN1R6-40YLC,115
MOSFET N-CH 40V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PSMN1R6-40YLC-115 is a N-Channel Power MOSFET. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C. The low on-resistance (Rds On) of 1.55mOhm at 25A and 10V, combined with a high power dissipation capability of 288W (Tc), makes it suitable for demanding applications. The MOSFET is housed in a compact LFPAK56 (Power-SO8) surface mount package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 126 nC at 10V and input capacitance (Ciss) of 7790 pF at 20V. It operates across a temperature range of -55°C to 150°C. Applications include automotive, industrial, and power supply systems. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1023, 4-LFPAK |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 288W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56; Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7790 pF @ 20 V |
Request a Quote
Clients Also Buy
PSMN3R9-100YSFX
MOSFET N-CH 100V 120A LFPAK56
PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB
BUK764R4-60E,118
MOSFET N-CH 60V 100A D2PAK
