PSMN1R5-30YL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN1R5-30YL-115 is a 30V N-channel Power MOSFET in a LFPAK56 (SOT-669) package. This device features a low Rds(on) of 1.5mOhm at 15A and 10V Vgs, enabling high efficiency in power switching applications. It offers a continuous drain current capability of 100A (Tc) with a maximum power dissipation of 109W (Tc). The MOSFET is designed for surface mount, with a compact LFPAK56 footprint that facilitates high density board designs. Key parameters include a gate charge (Qg) of 77.9 nC at 10V Vgs and input capacitance (Ciss) of 5057 pF at 12V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial motor control, and power supply applications where robust performance and thermal management are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 109W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5057 pF @ 12 V |
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