PSMN1R5-25YL,115
MOSFET N-CH 25V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel power MOSFET, part number PSMN1R5-25YL-115, offers a 25V drain-source voltage and 100A continuous drain current capability at 25°C. This device features a low on-resistance of 1.5 mOhm at 15A and 10V Vgs. Designed for high-efficiency power conversion, it is housed in the compact LFPAK56, Power-SO8 package (SC-100, SOT-669) for efficient thermal management, dissipating up to 109W. Key parameters include a gate charge of 76 nC at 10V and input capacitance of 4830 pF at 12V. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. It operates across an extended temperature range of -55°C to 150°C. This component is suitable for applications in automotive, industrial, and power supply sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 109W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4830 pF @ 12 V |
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