Nexperia USA Inc. PSMN1R0-40YLD-1X is a high-performance N-channel MOSFET designed for demanding power applications. This component features a low on-state resistance (Rds(on)) of 1 mO typical, enabling efficient power transfer and minimizing conduction losses. With a continuous drain current capability of 150 A and a drain-source voltage (Vds) of 40 V, it is well-suited for power switching, motor control, and battery management systems. The robust avalanche rating ensures reliability under inductive load switching conditions. Packaged in Bulk, this MOSFET is a critical element for power supplies, automotive electronics, and industrial automation. Its advanced trench technology provides superior performance and thermal characteristics, making it an excellent choice for high-density power designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet: