PSMN1R0-30YLD/1X
MOSFETManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN1R0-30YLD-1X is a high-performance N-channel MOSFET designed for demanding power applications. This component features a low on-state resistance (RDS(on)) of 1 mO at a VGS of 10V, enabling efficient power conversion and minimal power loss. With a continuous drain current (ID) rating of 120A and a pulsed drain current of 700A, it is well-suited for heavy-duty switching operations. The device operates with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its robust avalanche capability and high thermal performance make it a reliable choice for applications in automotive, industrial power, and server power supply sectors. Packaged in Bulk, the PSMN1R0-30YLD-1X offers excellent power handling and switching characteristics for advanced power management designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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