PSMN1R0-25YLD/1X
MOSFETManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN1R0-25YLD-1X Power MOSFET, a high-performance N-channel device, offers exceptional efficiency and reliability for demanding power applications. This MOSFET features a low on-state resistance (Rds(on)) of 1 mO typical at Vgs = 10 V and 0.9 mO typical at Vgs = 10 V, 25A, ensuring minimal power loss. With a continuous drain current of 100 A and a pulsed drain current of 400 A, it excels in high-current switching scenarios. The device boasts a low gate charge (Qg) and fast switching speeds, crucial for optimizing power conversion efficiency. Its robust avalanche energy rating (EAS) of 450 mJ at 25V, 25A indicates superior reliability under inductive load transients. The PSMN1R0-25YLD-1X is suitable for use in automotive, industrial, and consumer electronics, particularly in power management units, motor control, and DC-DC converters. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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