PSMN165-200K,518
MOSFET N-CH 200V 2.9A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PSMN165-200K-518 is an N-channel power MOSFET designed for efficient power switching applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.9A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 165mOhm at 2.5A and 10V gate-source voltage (Vgs), ensuring minimal power loss. With a 10V drive voltage, it provides robust performance. Key characteristics include a gate charge (Qg) of 40 nC (Max) at 10V and an input capacitance (Ciss) of 1330 pF (Max) at 25V. The PSMN165-200K-518 is housed in an 8-SOIC package for surface mounting and has a maximum power dissipation of 3.5W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 25 V |
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