PSMN130-200D,118
MOSFET N-CH 200V 20A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN130-200D-118 TrenchMOS™ N-Channel power MOSFET, featuring a 200V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C. This component is designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. It offers a low on-resistance of 130mOhm at 25A and 10V Vgs. Key parameters include a gate charge of 65 nC and input capacitance of 2470 pF, both specified at 10V and 25V respectively. With a maximum power dissipation of 150W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive, industrial, and power supply sectors. The device is supplied on a tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
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