PSMN085-150K,518
MOSFET N-CH 150V 3.5A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PSMN085-150K-518 is a TrenchMOS™ N-Channel enhancement mode MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 3.5A at 25°C, with a maximum power dissipation of 3.5W. The on-resistance (Rds On) is specified as 85mOhm at 3.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 40 nC and Input Capacitance (Ciss) of 1310 pF, both measured under specified voltage conditions. The device operates within an extended temperature range of -55°C to 150°C and is housed in an 8-SOIC package, suitable for surface mounting. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 25 V |
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