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PSMN070-200B,118

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PSMN070-200B,118

MOSFET N-CH 200V 35A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ PSMN070-200B-118 is an N-channel power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 35A (Tc) at 25°C. The low on-resistance (Rds On) of 70mOhm at 17A and 10V gate drive voltage, combined with a maximum power dissipation of 250W (Tc), makes it suitable for demanding power conversion and motor drive circuits. The TrenchMOS™ technology ensures optimized performance. Key electrical characteristics include a gate charge (Qg) of 77 nC (max) at 10V and input capacitance (Ciss) of 4570 pF (max) at 25V. This surface mount component is housed in a D2PAK (TO-263-3) package and operates across an extended temperature range of -55°C to 175°C. It finds application in sectors such as industrial automation, consumer electronics, and automotive systems requiring robust power management.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4570 pF @ 25 V

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