PSMN063-150D,118
MOSFET N-CH 150V 29A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PSMN063-150D-118 is an N-Channel Power MOSFET designed for demanding applications. This component features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 29A at 25°C (Tc). The low on-resistance (Rds On) of 63mOhm at 15A and 10V gate-source voltage (Vgs) ensures high efficiency, with a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 55 nC at 10V and an input capacitance (Ciss) of 2390 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), it is housed in a TO-252-3, DPAK (SC-63) package for surface mounting and supplied on tape and reel. This device is suitable for power supply, motor control, and automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF @ 25 V |
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