PSMN038-100K,518
MOSFET N-CH 100V 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PSMN038-100K-518 is an N-Channel Power MOSFET with a drain-source voltage of 100V. This component features a low on-resistance of 38mOhm at 5.2A and 10V Vgs. The continuous drain current is rated at 6.3A (Tj) with a maximum power dissipation of 3.5W (Tc). It is housed in an 8-SOIC package and is supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial sectors requiring efficient power switching. Key parameters include a gate charge of 43 nC at 10V and an input capacitance of 1740 pF at 25V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Tj) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 25 V |
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