PSMN035-150B,118
MOSFET N-CH 150V 50A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PSMN035-150B-118, offers a 150V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). This device features a low on-resistance of 35mOhm maximum at 25A and 10V, with a 10V gate drive voltage. Key characteristics include a maximum gate charge of 79 nC at 10V and an input capacitance of 4720 pF maximum at 25V. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. With a maximum power dissipation of 250W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in industrial power supplies and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4720 pF @ 25 V |
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