PSMN030-150P,127
MOSFET N-CH 150V 55.5A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PSMN030-150P-127 is an N-Channel MOSFET from the TrenchMOS™ series. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain current (Id) of 55.5A at 25°C. The device exhibits a maximum Rds On of 30mOhm at 25A and 10V gate-source voltage. With a Gate Charge (Qg) of 98 nC at 10V and an Input Capacitance (Ciss) of 3680 pF at 25V, this MOSFET is suitable for demanding power applications. It offers a maximum power dissipation of 250W (Tc) and operates within a temperature range of -55°C to 175°C. The component is housed in a standard TO-220AB package and is available in tube packaging. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and renewable energy inverters.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 25 V |
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