PSMN027-100XS,127
MOSFET N-CH 100V 23.4A TO220FManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PSMN027-100XS-127 is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 23.4 A at 25°C, this component is engineered for efficient power handling. The device exhibits a low on-resistance (Rds On) of 26.8 mOhm maximum at 5A and 10V gate drive. With a maximum power dissipation of 41.1 W (Tc), it is suitable for operation across a wide temperature range from -55°C to 175°C (TJ). The MOSFET is housed in an isolated tab TO-220F package, facilitating through-hole mounting. Key electrical parameters include a gate charge (Qg) of 30 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1624 pF maximum at 50V Vds. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.8mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1624 pF @ 50 V |