PSMN025-100D,118
MOSFET N-CH 100V 47A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PSMN025-100D-118 is an N-Channel MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 47A (Tc) at 25°C. The Rds On is rated at a maximum of 25mOhm at 25A and 10V, with a gate drive voltage of 10V.
The device offers a maximum power dissipation of 150W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 61 nC (max) at 10V and an Input Capacitance (Ciss) of 2600 pF (max) at 25V. The PSMN025-100D-118 is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 package, suitable for surface mounting. It is supplied on tape and reel. This MOSFET is commonly utilized in power supply, automotive, and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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