PSMN018-100PSFQ
MOSFET N-CH 100V 53A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN018-100PSFQ is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 53A at 25°C, with a maximum power dissipation of 111W (Tc). The low on-resistance (Rds On) of 18mOhm is achieved at 15A and 10V Vgs. Key parameters include a gate charge (Qg) of 21.4 nC at 10V and input capacitance (Ciss) of 1482 pF at 50V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220AB package for through-hole mounting. This MOSFET is suitable for various industrial power management and conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1482 pF @ 50 V |
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