PSMN017-30PL,127
MOSFET N-CH 30V 32A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN017-30PL-127 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 32A at 25°C. The low on-resistance (Rds(on)) of 17mOhm at 10A and 10V Vgs ensures efficient power transfer. With a maximum power dissipation of 45W (Tc), it is suitable for use in power supplies, motor control, and battery management systems. The MOSFET operates with gate drive voltages between 4.5V and 10V, and has a threshold voltage (Vgs(th)) of 2.15V at 1mA. It is housed in a standard TO-220AB through-hole package and can operate in an extended temperature range from -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 552 pF @ 15 V |
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