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PSMN017-30BL,118

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PSMN017-30BL,118

MOSFET N-CH 30V 32A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia PSMN017-30BL-118 is an N-channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 32A at 25°C. The on-resistance (Rds On) is specified at a maximum of 17mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 10.7 nC (max) at 10V and input capacitance (Ciss) of 552 pF (max) at 15V. This MOSFET is housed in a TO-263-3, D2PAK surface mount package, offering excellent thermal performance with a power dissipation (Pd) of 47W (Tc). It operates across a wide temperature range of -55°C to 175°C (TJ). The drive voltage range for optimal Rds On is between 4.5V and 10V, with a maximum gate-source voltage (Vgs) tolerance of ±20V. The threshold voltage (Vgs(th)) is 2.15V at 1mA. This component is widely utilized in automotive, industrial, and consumer electronics sectors, particularly in power management and conversion circuits. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)47W (Tc)
Vgs(th) (Max) @ Id2.15V @ 1mA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds552 pF @ 15 V

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