PSMN015-110P,127
MOSFET N-CH 110V 75A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PSMN015-110P-127 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 110 V and a continuous drain current (Id) of 75 A at 25°C, with a maximum power dissipation of 300 W (Tc). The Rds On is specified at a maximum of 15 mOhm at 25 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 90 nC at 10 V and input capacitance (Ciss) of 4900 pF at 25 V. The device operates over a wide temperature range from -55°C to 175°C (TJ) and is housed in a standard TO-220AB package. This MOSFET is suitable for use in power supply and motor control applications across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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