PSMN015-100B,118
MOSFET N-CH 100V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PSMN015-100B-118 is a TrenchMOS™ N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device exhibits a low on-resistance of 15mOhm at 25A and 10V (Vgs). Key parameters include a gate charge (Qg) of 90nC (max) at 10V and an input capacitance (Ciss) of 4900pF (max) at 25V. Designed for surface mounting in a D2PAK (TO-263-3) package, it operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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