PSMN011-100YSFX
MOSFET N-CH 100V 79.5A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PSMN011-100YSFX is a 100 V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current capability of 79.5 A at 25°C (Tc) and a maximum power dissipation of 152 W (Tc). The drain-source voltage (Vdss) is rated at 100 V, with a gate-source voltage (Vgs) tolerance of ±20V. Key performance parameters include a low on-resistance (Rds On) of 10.9 mOhm at 20 A and 10 V, with a gate charge (Qg) of 34.3 nC at 10 V. Input capacitance (Ciss) is 2258 pF at 50 V. The device utilizes advanced MOSFET technology and is housed in the compact LFPAK56, Power-SO8 (SC-100, SOT-669) package, suitable for surface mounting. This MOSFET is commonly employed in industrial power supplies, automotive systems, and motor control applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 152W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2258 pF @ 50 V |
Request a Quote
Clients Also Buy
PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236AB
NX7002AKAR
MOSFET N-CH 60V TO-236AB
BUK9222-55A,118
MOSFET N-CH 55V 48A DPAK
