PSMN006-20K,518
MOSFET N-CH 20V 32A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PSMN006-20K-518 is a TrenchMOS™ N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 32A at 25°C (Tc), with a maximum power dissipation of 8.3W (Tc). The low on-resistance, specified as 5mOhm maximum at 5A and 4.5V Vgs, is achieved through advanced TrenchMOS technology. Key parameters include a gate charge of 32nC (Max) at 2.5V Vgs and an input capacitance (Ciss) of 4350pF (Max) at 20V Vds. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package, presented on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 1mA (Typ) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 20 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
