PSMN003-30P,127
MOSFET N-CH 30V 75A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc.'s PSMN003-30P-127 is a TrenchMOS™ N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The low on-resistance (Rds On) of 2.8mOhm at 25A and 10V gate-source voltage (Vgs) makes it suitable for high-efficiency power conversion. Key parameters include a gate charge (Qg) of 170nC at 10V and input capacitance (Ciss) of 9200pF at 25V. The device operates within a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220AB package for through-hole mounting. This MOSFET is utilized in various industries including automotive, industrial power supplies, and battery management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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