PMZB790SN,315
MOSFET N-CH 60V 650MA DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMZB790SN-315 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 650mA at 25°C (Ta). The Rds(On) is specified at a maximum of 940mOhm at 300mA and 10V Vgs. With a maximum power dissipation of 360mW (Ta) and 2.7W (Tc), it offers robust performance in compact designs. The DFN1006B-3 package is suitable for surface mounting, and the device operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 1.37 nC at 10V and Input Capacitance (Ciss) of 35 pF at 30V. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 650mA (Ta) |
| Rds On (Max) @ Id, Vgs | 940mOhm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 35 pF @ 30 V |