PMZB670UPE,315
MOSFET P-CH 20V 680MA DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMZB670UPE-315 is a P-Channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 680mA at 25°C (Ta). With a maximum Rds On of 850mOhm at 400mA and 4.5V, it offers efficient switching. The DFN1006B-3 package provides a compact footprint for space-constrained designs. Key electrical parameters include a gate charge (Qg) of 1.14 nC at 4.5V and input capacitance (Ciss) of 87 pF at 10V. Power dissipation is rated at 360mW (Ta) and 2.7W (Tc). This MOSFET is suitable for applications in consumer electronics and industrial systems requiring low-voltage P-channel switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 400mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 87 pF @ 10 V |
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