PMZB420UN,315
MOSFET N-CH 30V 900MA DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMZB420UN-315 is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 900mA at 25°C. The low Rds(on) of 490mOhm at 200mA and 4.5V Vgs, combined with a gate charge (Qg) of 0.98 nC at 4.5V, ensures minimal conduction and switching losses. The device operates with drive voltages between 1.8V and 4.5V, and has a maximum gate-source voltage (Vgs) of ±8V and a threshold voltage (Vgs(th)) of 950mV at 250µA. With a maximum power dissipation of 360mW (Ta) and 2.7W (Tc), it is suitable for operation across a wide temperature range of -55°C to 150°C. The DFN1006B-3 package offers a compact footprint for surface mounting. This MOSFET is commonly utilized in power management, consumer electronics, and automotive control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 490mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.98 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 25 V |
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