PMZB290UNE,315
MOSFET N-CH 20V 1A DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PMZB290UNE-315 is an N-Channel MOSFET designed for compact applications. This component offers a 20V drain-source voltage and a continuous drain current capability of 1A at 25°C ambient. It features a low 380mOhm maximum Rds(on) at 500mA and 4.5V Vgs. The device exhibits a gate charge of 0.68 nC maximum at 4.5V Vgs and an input capacitance of 83 pF maximum at 10V Vds. Power dissipation is rated at 360mW ambient and 2.7W case. The DFN1006B-3 package is suitable for surface mounting. This MOSFET is utilized in various consumer electronics and portable device designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 83 pF @ 10 V |
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