PMZ760SN,315
MOSFET N-CH 60V 1.22A DFN1006-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PMZ760SN-315 is an N-Channel TrenchMOS™ MOSFET designed for efficient power switching. This component features a 60 V breakdown voltage and a continuous drain current capability of 1.22 A at 25°C, with a maximum power dissipation of 2.5 W (Tc). The SOT-883 (SC-101) package facilitates surface mounting for compact designs. Key specifications include a low on-resistance of 900 mOhm at 300 mA and 10 V, and a gate charge of 1.05 nC at 10 V. This device is suitable for applications in consumer electronics and industrial automation where space and performance are critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.22A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-883 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.05 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 30 V |
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