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PMZ350XN,315

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PMZ350XN,315

MOSFET N-CH 30V 1.87A DFN1006-3

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia PMZ350XN-315 is an N-Channel TrenchMOS™ MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 1.87A at 25°C. The Rds On is specified at a maximum of 420mOhm at 200mA, 4.5V. With a gate charge (Qg) of 0.65 nC at 4.5V and input capacitance (Ciss) of 37 pF at 25V, it offers optimized performance for various power management tasks. The device's low on-resistance and efficient switching characteristics make it suitable for applications in consumer electronics and industrial automation. It is supplied in a compact SOT-883 (SC-101) surface mount package, delivered on tape and reel. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.87A (Tc)
Rds On (Max) @ Id, Vgs420mOhm @ 200mA, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSOT-883
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs0.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds37 pF @ 25 V

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