PMZ1000UN,315
MOSFET N-CH 30V 480MA DFN1006-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Nexperia PMZ1000UN-315 is an N-Channel MOSFET designed for surface-mount applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 480mA at 25°C. With a maximum on-resistance (Rds On) of 1 Ohm at 200mA and 4.5V gate-source voltage, it offers efficient switching. The gate charge (Qg) is a maximum of 0.89 nC at 4.5V, and input capacitance (Ciss) is 43pF at 25V. The device is housed in a compact SOT-883 (SC-101) package and supports a power dissipation of 350mW. Operating temperature ranges from -55°C to 150°C. This component is utilized in various electronics, including portable devices and power management circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-883 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
Request a Quote
Clients Also Buy
PSMN3R9-100YSFX
MOSFET N-CH 100V 120A LFPAK56
BUK7Y25-60EX
MOSFET N-CH 60V 34A LFPAK56
PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB
