PMV65XP/MIR
MOSFET P-CH 20V 2.8A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMV65XP-MIR is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.8 A at 25°C ambient. The on-resistance (Rds On) is specified at a maximum of 74 mOhm when conducting 2.8 A with a gate-source voltage (Vgs) of 4.5 V. Drive voltages range from 1.8 V to 4.5 V. The device offers a maximum power dissipation of 480 mW at ambient temperature and 4.17 W at case temperature. Key parameters include a gate charge (Qg) of 7.7 nC (max) at 4.5 V and an input capacitance (Ciss) of 744 pF (max) at 20 V. The PMV65XP-MIR is housed in a TO-236AB (SC-59) surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta), 4.17W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 744 pF @ 20 V |
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