PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMV48XP-MIR is a P-Channel MOSFET with a drain-source voltage of 20V. This surface mount component, packaged in a TO-236AB (SC-59), offers a continuous drain current of 3.5A at 25°C (Ta) and a maximum power dissipation of 510mW (Ta) or 4.15W (Tc). Key specifications include a maximum on-resistance of 55mOhm at 2.4A and 4.5V, and a gate charge of 11nC at 4.5V. Input capacitance (Ciss) is 1000pF at 10V. The operating temperature range extends to 150°C (TJ). This device is suitable for applications requiring efficient switching and power management in areas such as consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta), 4.15W (Tc) |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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