PMV32UP/MIR
MOSFET P-CH 20V 4A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. PMV32UP-MIR is a P-Channel MOSFET with a drain-source breakdown voltage of 20V. This surface mount component, housed in a TO-236AB (SC-59) package, offers a continuous drain current capability of 4A (Ta) at 25°C. The device features a low on-resistance of 36mOhm maximum at 2.4A and 4.5V Vgs. Key parameters include a gate charge of 15.5 nC (max) at 4.5V Vgs and an input capacitance of 1890 pF (max) at 10V Vds. Power dissipation is rated at 510mW (Ta) and 4.15W (Tc). The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta), 4.15W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 10 V |
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