PMV130ENEA/DG/B2R
MOSFET N-CH 40V 2.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PMV130ENEA-DG-B2R is an N-Channel MOSFET designed for demanding applications. This surface mount component features a 40V drain-source voltage and a continuous drain current of 2.1A at 25°C (Ta). With a maximum on-resistance of 120mOhm at 1.5A and 10V Vgs, it offers efficient switching characteristics. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications, and operates across a wide temperature range of -55°C to 150°C (TJ). Key electrical parameters include a maximum gate charge (Qg) of 3.6 nC at 10V and an input capacitance (Ciss) of 170 pF at 20V. The TO-236AB package facilitates compact board designs. This MOSFET is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-236AB |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 20 V |
| Qualification | AEC-Q101 |
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