PMT21EN,115
MOSFET N-CH 30V 7.4A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMT21EN-115 is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source breakdown voltage (Vdss) of 30V and a continuous drain current (Id) capability of 7.4A at 25°C ambient. The low on-resistance (Rds On) of 21mOhms is specified at 7.4A and 10V gate-source voltage.
The PMT21EN-115 is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, suitable for high-density board designs. It offers a maximum power dissipation of 820mW at 25°C ambient and 8.33W at 25°C case temperature. Key electrical parameters include a gate charge (Qg) of 14.4 nC at 10V Vgs and input capacitance (Ciss) of 588 pF at 15V Vds. This MOSFET operates across a wide temperature range of -55°C to 150°C. Its robust design makes it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 588 pF @ 15 V |
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