PMPB8XNX
MOSFET N-CH 20V 10.1A 6DFNManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PMPB8XNX is an N-Channel MOSFET designed for demanding applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 10.1A at 25°C (Ta). With a low on-resistance of 12mOhm at 10.1A and 4.5V Vgs, it ensures efficient power transfer. The device supports gate drive voltages between 1.5V and 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Key specifications include a maximum gate charge (Qg) of 30 nC at 4.5V and input capacitance (Ciss) of 1696 pF at 10V. The PMPB8XNX is housed in a compact 6-UDFN exposed pad (DFN2020MD-6) package, suitable for surface mounting. Maximum power dissipation is rated at 1.9W (Ta) and 12.5W (Tc). This MOSFET is typically utilized in power management, consumer electronics, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 10 V |
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