PMPB40SNA,115
MOSFET N-CH 60V 12.9A 6DFNManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. presents the PMPB40SNA-115, an N-Channel MOSFET designed for robust power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) capability of 12.9 A at 25°C (Tc). With a maximum Rds On of 43 mOhm at 4.8 A and 10 V, it offers efficient power delivery. The device is housed in a compact 6-DFN2020MD-6 package, suitable for surface mounting and optimized for thermal performance with a power dissipation of 12.5 W (Tc). Key electrical characteristics include a gate charge (Qg) of 24 nC at 10 V and input capacitance (Ciss) of 612 pF at 30 V. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly employed in industrial automation, consumer electronics, and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 30 V |
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